By: Don Allen
Re: Semiconducters 1 of 7
* Forwarded from "BAMA"
* Originally by Walter Bartoo
* Originally to all
* Originally dated 2 Jun 1994, 18:29
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( FOR IMMEDIATE RELEASE )
Introduction by Bill Ramsay, 251 Asa Hall Road, Iva, SC 29655,
(803) 296-3200. Additional information on request.
A few notes about the enclosed paper by Bill Fogal, "Charged
Barrier Semiconductor Technology and Wave Function Design."
I've had several phone conversations with Bill about the
specifics of his discovery/invention to clarify my understanding.
I hope I've got it right.
He uses the term 'electrolytic' in a very generic sense. In
his first experimenting some years ago he actually used cut up
pieces of electrolytics which he glued to taken apart transis-
tors. Most recently he has been using thin tantalum 'slugs.'
In "Voice Graphs' B, D and F the apparent flat-topping of
the waveforms is really a characteristic of the software
technique used which cuts off and piles up all amplitudes above
pre-set limits. This was apparently done for presentation pur-
poses since the actual dynamic ranges are much greater.
I added some notes and a diagram, "Typical Operation", to
his Fig. 14 as well as made a minor correction to the 'patent
form' detailed rendering (Draftsman error).
Bill has done his 'homework' thoroughly and does have Inter-
national as well as domestic Patents with one pending in Japan.
His presentation of this paper, May 13, 1994, at "The Interna-
tional Symposium on New Energy" in Denver was the first public
exposure of his discovery/invention. This is certain to create
quite a stir - eventually a revolution!
I wish I could be a 'fly on the wall' in the Board Rooms of
the Semi-conductor giants when this all breaks. Also in those of
the Mega-buck funded "Research" places. I'm sure there will be
many red faces and frantic scrambles to 'pre-invent' this
discovery. But, with the Patents and media attention it should
be impossible for the 'technology bandits' to steal! Although,
I'm sure some will try!
It seems to be still a truism as has been said,
"Intelligence is a trait of individuals and varies in inverse
proportion to the size of organizations".
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AND WAVE FUNCTION BIPOLAR DESIGNS
William Jay Fogal*
This paper will cover the design and electron wave function
on a new patented technology. This new technology is a Charged
Barrier Semiconductor with a very high AC voltage and AC current
gain. This Charged Barrier Device is on a Bipolar Design that
can be incorporated in (MOS) Metal Oxide Semiconductor Designs,
as well as multiple gate devices. This semiconductor device
operates on a hall effect electromagnetic field internal device.
The hall effect magnetic field will force electron flow and
angular spin of the electrons in the same direction to the top of
the conduction bands in the crystal lattice on semiconductor
devices, unlike (SOI) Silicon On Insulator Devices that force
electron flow to the surface of the semiconductor lattice.
Since the conception of the first semiconductor device
(TRANSISTOR) in the first half of this Century, semiconductor
devices have had many changes to their design. The ultimate goal
is to design a device that will transfer electron flow with
increased speed and not heat up the process of the transfer of
the flow. Today, we have very fast devices, but the scattering
of the electrons in the crystal lattice will slow the electron
flow and cause the semiconductor to generate heat. This problem
is evident in single and multi layer IC semiconductor designs.
*President of Quick Chek Industries. Inventors and
manufacturers of Electronic Testing Devices. Member Advisory
Council on Science and Technology.
Copyright William Jay Fogal, 1994.
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HOW DO CHARGED BARRIER SEMICONDUCTOR DEVICES WORK?
Charged Barrier Semiconductor Devices incorporate a base
plate member of a semiconductor crystal. Also incorporated with
the base plate member is a dialectic material and a second base
plate member. The combination of the two base plate members
constitutes an electrolytic capacitor.
The first base plate member will create a transverse elec-
tric field that is known as a hall effect in the base plate
member of the semiconductor crystal. The ratio of the transverse
electric field strength to the product of the current and the
magnetic field strength is called the hall coefficient, and its
magnitude is inversely proportional to the carrier concentration
on the base plate member. The product of the hall coefficient
and the conductivity is proportional to the mobility of the
carriers when one type of carrier is dominant. Since the base
plate member is tied directly to the emitter junction of the
semiconductor, the hall coefficient comes into play with the
creation of a one pole electromagnet in the base plate member.
The hall effect of the electrolytic capacitor in relation to
the position on the crystal lattice will force electron angular
spin in the same direction and electron flow to the top of the
conduction bands in the lattice. The magnetic flux and the
density of the carriers on the electrolytic capacitor plate are
in direct proportion to the magnetic flux and carrier concentra-
tion on the emitter junction on the semiconductor crystal.
Since the angular spin and the flow of the electrons are in
the same direction, due to the influence of the electromagnetic
field, the electron lattice interaction factor does not come into
play. The electron wave density is greater and the mobility of
the electron flow is faster. The device does not exhibit fre-
quency loss in the wave.
The base or gate of the semiconductor is more sensitive to
input signal. These devices will typically turn on with an input
to the junction in the area of .2MV to .4MV with an output at the
collector junction of 450MV at 133.5UA of current.
ELECTRON WAVE FUNCTION IN CHARGED BARRIER TECHNOLOGY
Think of the conduction bands in a crystal lattice as a
highway. Electrons in the free state will move along this high-
way. The only difference is the electron angular spin can be in
different directions. With the electrons spinning in different
directions, the electrons would travel on different lanes of the
highway and collisions can occur. The scattering and the colli-
sion of the electrons can cause friction and resistance to the
flow. The resistance to the flow and the friction can cause
semiconductors to run hot. In semiconductor devices, this is
called lattice scattering or electron lattice interaction.
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If we could make the electrons move in one direction, and
also spin in the same direction, then we could have more traffic
electrons (on the highway) without having the resistance or the
collisions. We could put a barrier between the lanes on the
highway. But, the electrons could still spin in different
directions. But, what if we could charge this barrier! Turn
this barrier into an electromagnetic field! An electromagnetic
field in one direction. A one pole electromagnet! A hall effect
This one pole electromagnetic field would make almost all of
the electrons spin in the same direction. Because the electrons
are a negative charge and the electromagnetic field has a nega-
tive charge the electrons travel in unison and then we could have
more electrons on the highway, and the electron travel could be
The orientation of the spin of the electrons in the crystal
lattice, due to the electromagnetic field has a direct impact on
the formation of the wave. If the orientation of the spin of the
electrons are in unison, there will be no loss in the wave nature
and the density of the wave will be greater and the frequency of
the wave will be complete.
If the spin of the electrons in the lattice are in different
directions, the wave nature will be affected and there will be a
loss in the density of the wave. And, there will be a gap in the
frequency of the wave.
APPLICATIONS FOR THE CHARGED BARRIER TECHNOLOGY
* Charged Barrier Technology can be used in computer appli-
cations as well as Digital Switching Applications.
* With the sensitivity to input of Charged Barrier Devices,
there are many applications for the use as front end RF
amplifiers for radio telescopes, radar, biomedical ultra-
sound imaging and radio communications.
* With the density in wave function and no loss in the
frequency of the wave, Charged Barrier Devices can be used
to enhance the quality of ultrasound imaging. More density
in the wave function with no loss in the frequency of the
wave, the sharper the picture.
* The more density in the wave, the longer the travel of
the wave before disruptions to the wave would affect the
quality of the transmissions. Applications for use in radar
transmissions and receptions for radar imaging and mapping.
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* Charged Barrier Technology can be used for fabrication of
micro processor circuits to increase the speed in which
information can be processed for computer applications. The
technology can also be used for Digital Memory Storage and
Analog to Digital Converters.
* Transmission lines that not only move information, but
power over long distances - there would be less need for
signal or line transmission amplifiers at certain intervals
along a transmission line to boost the signal or power.
* Audio electronics for home and cars in which the sound
quality and power would be quite unique in the fact there
would be no need for equalizers to enhance sound quality,
and no need for audio amplifiers to boost the output of the
audio from the system. Automotive sound systems could have
as much power as 100 to 200 watts of power - just from the
* Power supply applications in which there would be no need
to have heat sinks to dissipate heat from the internal
components. Charged Barrier Devices reduce electron lattice
scattering, no heat from components - no need to heat sink.
SIMILARITIES OF CHARGED BARRIER DESIGNS TO CURRENT DESIGNS
- No known MOS Design Semiconductor or Bipolar
Semiconductor Designs can compare to Charged Barrier Semi-
- Standard Bipolar Design Semiconductor devices would not
turn on at an input to the junction of .2MV of signal.
Standard Bipolar Designs required an input to the junction
of 3.5MV to 4.5MV to produce an output at the collector
junction of at least 20UA of current.
- Charged Barrier Devices will turn on at .2MV of signal at
the junction and produce an output at the collector junction
of 450MV at 133.5UA of current.
- MOS Fet Designs are voltage devices and can not approach
the sensitivity of Charged Barrier Devices.
WHAT ABOUT SUPERCONDUCTING DEVICES?
A Josephson Tunnel Junction or DC Squid incorporates a 50
turn superconduction loop to create an electromagnetic field
around the junction for the junction to work. Charged Barrier
Devices use an electrolytic capacitor to create a hall effect
electromagnetic field around a bipolar junction.
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THE (FIG. 7) (SIS) QUASIPARTICLE JUNCTION
The characteristics of the Charged Barrier Semiconductor are
similar to the characteristics of the FIG. 7 (SIS) Quasiparticle
Junction. The FIG. 7 junction will turn on at an input of 3MV
and produce a current of just over 200UA. Charged Barrier De-
vices will turn on at .2MV with an output of 133.5UA.
A wafer frozen at a temperature of 1.2K or (-457.5F) would
force electrons from their orbit around the atoms to the top of
the wafer, where they would become free electrons. The top of
the wafer would then act like an electrolytic capacitor because
of the electron carrier concentration to the top of the wafer.
On electrolytic capacitor's, carrier concentration will be on one
plate of the capacitor. The top of the wafer would then act like
a hall effect magnetic field. The electrons would then have an
angular spin the same direction, due to the influence of the hall
effect magnetic field. A permanent magnet suspended over the top
of wafer would tend to rotate in the same direction as the angu-
lar spin of the electrons on the top of the wafer.
DIGITAL VOICE GRAPH
The voice graphs show the word (Atlanta Braves) over the
digital transmission lines. The transmission was broken down
from transmissions of digital speech over the transmission sys-
tem. The sentence was then broken down to the single two words
(Atlanta Braves) to receive an accurate reading of the transmis-
The transmission in FIG. (A) is that of an adult male voice
over the digital transmission network. The voice pattern does
not have adequate definition and frequency response in the pat-
The transmission in FIG. (B) is the same adult male voice
pattern over the digital transmission network with the use of the
Charged Barrier Technology. The voice pattern has both, defini-
tion and frequency response in the pattern.
The transmission in FIG. (C) is that of a teenage male voice
pattern over the digital transmission network. The voice pattern
does not have adequate definition and frequency response in the
The transmission in FIG. (D) is the same teenage voice
pattern over the digital transmission network with the Charged
Barrier Technology. The voice pattern has both, definition and
frequency response in the pattern.
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The transmission in FIG. (E) is that of an adult woman voice
pattern over the digital transmission network. Again, both
definition and frequency response are not adequate in the voice
pattern. The transmission in FIG. (F) is the same adult woman
voice pattern over the digital transmission network with the
Charged Barrier Technology. The voice pattern has both, defini-
tion and frequency response in the pattern.
SCHEMATIC ON CHARGED BARRIER DESIGN
The design on Charged Barrier Technology is covered in the
FIG. (14) diagram. The junctions of the semiconductor are as
follows: Emitter Junction (124), Base Junction (126), and Col-
lector Junction (128). The Charged Barrier Technology on the
semiconductor crystal base plate are listed as follows: First
refractory base plate member (120), Dialectic (118) and Second
Base Plate Member (116).
The resistor material is listed as (114). The first refrac-
tory base plate member is tied directly to the emitter junction
on the semiconductor crystal. The resistor material is connected
to the emitter junction on the semiconductor crystal along with
the first base plate member. The second base plate member, along
with the resistive material, is tied to a ground source.
As the emitter junction receives the concentration of
carriers, the refractory base plate member will receive the same
carrier concentration as the emitter junction. The grounded
second base plate member will force carrier concentration to
gather on the first refractory base plate member and not
discharge across the base plates. The resistive material will
allow a path to ground for the carrier concentration on the
emitter junction and the first refractory base plate member. The
action will constantly change the rate of carrier concentration
on the refractory base plate member. The refractory base plate
member will create an electromagnetic field as the carrier
concentration changes on the base plate member. This will create
the electromagnetic field in the semiconductor substrate of the
This can be the basic design for (Metal Oxide) MOS Design
Semiconductor Technology. This design will not harm the channel
width or depth in MOS designs. The base plate member can be in
sections to cover different parts of chip fabrication. The base
plate members can be sectioned for different parts of
construction and can be tied together in parallel with the
carrier source to even the carrier concentration between the
different base plate members on IC chip designs. The construc-
tion can also be covered in FIGURES (10) through FIGURES (13).
This construction is for single chip fabrication on Bipolar and
Darlingtor Design Transistors.
( End Of File )
For additional information, patents, charts, tests, and lab data
contact Bil Ramsey on cover page.